Влияние гамма-облучения на фотоэлектрические параметры InSe-гетероструктур
The influence of γ‑irradiation (60Co) on the photoelectric parameters of InSe diodes has been investigated. Irradiation at doses of 10–300 R leads to an increase in the values of the current rectification coefficient, open‑circuit voltage, and short‑circuit current, while practically not affecting t...
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| Date: | 2005 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.47 |
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| Journal Title: | Technology and design in electronic equipment |