Влияние термообработки на электрофизические свойства CdZnTe-детекторов γ-излучения

• Дата: 2005
• Автори: Kutniy, V. E., Kutniy, D. V., Rybka, A. V., Abyzov, A. S., Davydov, L. N., Nakonechny, D. V., Shlyakhov, I. N.
• Формат: Стаття
• Мова: Українська
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2005
• Теми: полупроводниковый детектор; CdZnTe; вольт-амперная характеристика; омический контакт; структура
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.12
• Назва журналу: Technology and design in electronic equipment

The effect of heat treatment (HT) on the electrophysical properties of γ-ray detectors based on a p-type CdZnTe semiconductor compound was investigated. The optimal HT conditions were determined. It was shown that the application of HT allows for a significant reduction in leakage current and an increase in operating voltage, which contributes to an improvement in the spectrometric characteristics of the detector. Experimental results are presented demonstrating that the change in the detector’s characteristics is largely due to modification of the metal-semiconductor interface rather than changes in the properties of the side surface.