Установка электрохимического профилирования для диагностирования эпитаксиальных структур GaAs
An electrochemical profiling setup for semiconductor structures has been developed, in which the concentration of free charge carriers is determined from the capacitance–voltage characteristics of the electrolyte–semiconductor barrier, while scanning through the thickness of epitaxial layers is perf...
Gespeichert in:
| Datum: | 2005 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2005
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.40 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipment| Zusammenfassung: | An electrochemical profiling setup for semiconductor structures has been developed, in which the concentration of free charge carriers is determined from the capacitance–voltage characteristics of the electrolyte–semiconductor barrier, while scanning through the thickness of epitaxial layers is performed by photoelectrochemical etching of the semiconductor. Using GaAs epitaxial structures as an example, high measurement accuracy of carrier concentration to a depth of at least 10 μm has been demonstrated. |
|---|