Использование КНИ-транзистора в качестве генератора колебаний напряжения

• Дата: 2005
• Автори: Ninidze, G. K., Pavljuk, S. P., Ishchuk, L. V., Kushnirenko, V. V.
• Формат: Стаття
• Мова: Українська
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2005
• Теми: кремний на изоляторе; колебания напряжения; генератор
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.54
• Назва журналу: Technology and design in electronic equipment

Voltage and current oscillations in field-effect transistors fabricated using silicon-on-insulator (SOI) technology have been investigated. It has been shown that by changing the transistor’s supply conditions, the oscillation frequency can be varied over a wide range (0.1–1 MHz), as well as their n...