Использование КНИ-транзистора в качестве генератора колебаний напряжения
Voltage and current oscillations in field-effect transistors fabricated using silicon-on-insulator (SOI) technology have been investigated. It has been shown that by changing the transistor’s supply conditions, the oscillation frequency can be varied over a wide range (0.1–1 MHz), as well as their n...
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| Datum: | 2005 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.54 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | Voltage and current oscillations in field-effect transistors fabricated using silicon-on-insulator (SOI) technology have been investigated. It has been shown that by changing the transistor’s supply conditions, the oscillation frequency can be varied over a wide range (0.1–1 MHz), as well as their nature — from quasi-harmonic to relaxation oscillations. This makes it possible to use such a transistor as a voltage oscillation generator. It was established that these oscillations are caused by physical processes occurring directly within the transistor. A qualitative description of these processes is provided. |
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