Использование КНИ-транзистора в качестве генератора колебаний напряжения

• Datum: 2005
• Hauptverfasser: Ninidze, G. K., Pavljuk, S. P., Ishchuk, L. V., Kushnirenko, V. V.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2005
• Schlagworte: кремний на изоляторе; колебания напряжения; генератор
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.54
• Назва журналу: Technology and design in electronic equipment

Voltage and current oscillations in field-effect transistors fabricated using silicon-on-insulator (SOI) technology have been investigated. It has been shown that by changing the transistor’s supply conditions, the oscillation frequency can be varied over a wide range (0.1–1 MHz), as well as their n...