Формирование гетероструктур GaTe/CdSe для использования в солнечных элементах
The issue of replacing cadmium chalcogenides in solar cell structures is considered. The process of cadmium selenide epitaxy on a layered GaTe substrate has been investigated. It is shown that this process is accompanied by reactive interaction of the components, subsequent diffusion of gallium at...
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| Datum: | 2005 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2005
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| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.2.59 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The issue of replacing cadmium chalcogenides in solar cell structures is considered. The process of cadmium selenide epitaxy on a layered GaTe substrate has been investigated. It is shown that this process is accompanied by reactive interaction of the components, subsequent diffusion of gallium atoms from the substrate to the surface, and the formation of Ga-Se bonds relative to the bulk Ga-Te and epitaxial Cd-Se components of the photoelectron spectrum.
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