Вплив радіаційних дефектів на електрофізичні та детекторні властивості CdTe:Cl, опроміненого нейтронами
A promising material for semiconductor detectors of ionizing radiation is CdTe:Cl which allows obtaining detectors with high resistivity ρ and electron mobility μn. During operation, the detector materials may be exposed to neutron irradiation, which causes radiation defects to form in crystal latti...
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| Date: | 2020 |
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| Main Authors: | , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2020
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2020.1-2.22 |
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| Journal Title: | Technology and design in electronic equipment |