Малосигнальная модель транзистора в разработке СВЧ малошумящих усилителей

• Date: 2004
• Main Author: Yemtsev, P. A.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2004
• Subjects: транзистор с высокой подвижностью электронов; моделирование; определение параметров
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.6.49
• Journal Title: Technology and design in electronic equipment

A semi-analytical method for determining the parameters of high electron mobility transistors is presented, which requires only data on the transistor’s S-parameters measured over a wide frequency range. The main aspects of model decomposition are described. An example of amplifier construction is g...