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Микронегатронный преобразователь давления на основе кремниевой МОП-структуры

The influence of local anisotropic pressure on a silicon MOS structure has been investigated. It is shown that the increase in inversion capacitance is associated not only with the growth of positive carriers in the oxide at the Si–SiO interface under the influence of local pressure, but also with t...

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Bibliographic Details
Date:2004
Main Authors: Gasanov, A. M., Kasimov, F. D., Lutfalibekova, A. E.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2004
Subjects:
негатрон
МОП-структура
локальное давление
упругие механические напряжения
ширина запрещенной зоны
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.5.29
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:The influence of local anisotropic pressure on a silicon MOS structure has been investigated. It is shown that the increase in inversion capacitance is associated not only with the growth of positive carriers in the oxide at the Si–SiO interface under the influence of local pressure, but also with the reduction of the semiconductor band gap width. A negatron circuit is proposed that converts pressure into frequency.

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