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Выбор полупроводникового материала для детекторов гамма-излучения

Among the semiconductors used in spectrometers and dosimeters, wide-bandgap compounds such asCd1-xZnxTe, CdTe, and HgI2 occupy leading positions. The question arises as to whether this choice is definitive and optimal. In an attempt to answer this question, physical parameters critical to the detect...

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Bibliographic Details
Date:2004
Keywords:keywords
Main Authors: Abyzov, A. S., Azhazha, V. M., Davydov, L. N., Kovtun, G. P., Kutny, V. E., Rybka, A. V.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2004
Subjects:
детектор
γ-излучение
полупроводниковые соединения
ширина запрещенной зоны
подвижность
время жизни
удельное сопротивление
атомный номер
периодическая таблица элементов
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.03
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:Among the semiconductors used in spectrometers and dosimeters, wide-bandgap compounds such asCd1-xZnxTe, CdTe, and HgI2 occupy leading positions. The question arises as to whether this choice is definitive and optimal. In an attempt to answer this question, physical parameters critical to the detector’s sensitivity were selected. These include, first and foremost, mobility, lifetime, atomic number, and resistivity. Based on the selected parameters, an analysis of binary compounds with a tetrahedral structure was conducted.

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