Изменения низкочастотных шумов в р-n-переходах при низких температурах
The results of experimental studies of a gallium arsenide diode in the temperature range of 78–300 K are presented. It is proposed that, when designing equipment, the operational stability of semiconductor sensors in the low-temperature range be preliminarily assessed based on an analysis of generat...
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| Datum: | 2004 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2004
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.2.10 |
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| Назва журналу: | Technology and design in electronic equipment |