Исследование свойств полупроводниковых материалов для детекторов ионизирующих излучений

Using computer modeling, the drift mobility of conduction electrons (µ) and the specific resistivity (ρ) of CdZnTe detector material were investigated as functions of impurity composition and the molar fraction of CdTe (CCdTe ) at a temperature of T = 300 K. It was established that an increase in th...

Full description

Saved in:
Bibliographic Details
Date:2003
Main Authors: Kondrik, A. I., Kovtun, G. P.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2003
Subjects:
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.03
Tags: Add Tag
No Tags, Be the first to tag this record!
Journal Title:Technology and design in electronic equipment

Institution

Technology and design in electronic equipment