Радиационное легирование сульфида кадмия и арсенида галлия

• Дата: 2003
• Автори: Mokritsky, V. A., Garkavenko, A. S., Zubarev, V. V., Lenkov, S. V.
• Формат: Стаття
• Мова: Українська
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2003
• Теми: радиационное легирование; CdS; GaAs; быстрые нейтроны; ядерные реакции
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.14
• Назва журналу: Technology and design in electronic equipment

An experimental study was carried out to investigate the possibility of obtaining layers with hole conductivity in CdS and GaAs single crystals using radiation doping. A monoenergetic flux of fast neutrons with an energy of 14.5 MeV was applied. Measurements confirmed the formation of such layers....