Радиационное легирование сульфида кадмия и арсенида галлия
An experimental study was carried out to investigate the possibility of obtaining layers with hole conductivity in CdS and GaAs single crystals using radiation doping. A monoenergetic flux of fast neutrons with an energy of 14.5 MeV was applied. Measurements confirmed the formation of such layers....
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| Datum: | 2003 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.14 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | An experimental study was carried out to investigate the possibility of obtaining layers with hole conductivity in CdS and GaAs single crystals using radiation doping. A monoenergetic flux of fast neutrons with an energy of 14.5 MeV was applied. Measurements confirmed the formation of such layers. Nuclear reactions occurring in the crystals under neutron irradiation, which lead to acceptor doping, are described. Based on the p–n junction created in CdS by this method.
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