СВЧ полевые транзисторы средней мощности миллиметрового диапазона длин волн
The paper presents the results of optimization of the design and fabrication technology of microwave field-effect transistors of medium power with an operating frequency in the range of 18–36 GHz on GaAs epitaxial structures. The output power of the transistors is about 100 mW at 1 dB compression, t...
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| Date: | 2003 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.6.27 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The paper presents the results of optimization of the design and fabrication technology of microwave field-effect transistors of medium power with an operating frequency in the range of 18–36 GHz on GaAs epitaxial structures. The output power of the transistors is about 100 mW at 1 dB compression, the noise figure does not exceed 3.0 dB, and the power gain is at least 4 and 7 dB at frequencies of 36 and 18 GHz, respectively. The design of measuring devices and the methodology for studying these parameters in the short centimeter and millimeter wavelength ranges are described. |
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