Усиление тока в инжекционных фотодиодах с полевым электродом

The physical mechanism of internal photocurrent amplification in a p-n junction with a long base, on the lateral surface of which a field MOS electrode is created, is presented. The combined action of several amplification mechanisms increases the sensitivity of the injection photodiode.

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Bibliographische Detailangaben
Datum:2003
Hauptverfasser: Vikulin, I. M., Kurmashev, Sh. D., Sidorets, R. G., Tumanov, Yu. G.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2003
Schlagworte:
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.4.46
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment