Усиление тока в инжекционных фотодиодах с полевым электродом
The physical mechanism of internal photocurrent amplification in a p-n junction with a long base, on the lateral surface of which a field MOS electrode is created, is presented. The combined action of several amplification mechanisms increases the sensitivity of the injection photodiode.
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| Datum: | 2003 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.4.46 |
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| Назва журналу: | Technology and design in electronic equipment |