Buchumschlag

Мощные СВЧ-транзисторы на основе широкозонных полупроводников

A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate influence on device characteristics. It is shown t...

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Bibliographische Detailangaben
Datum:2003
Hauptverfasser: Bosyi, V. I., Ivashchuk, A. V., Kovalchuk, V. N., Semashko, E. M.
Format: Artikel
Sprache:Ukrainisch
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2003
Schlagworte:
мощные СВЧ‑транзисторы
гетероструктуры AlGaN/GaN
HEMT
надежность приборов
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.53
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Назва журналу:Technology and design in electronic equipment
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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate influence on device characteristics. It is shown that HEMTs based on AlGaN/GaN heterostructures can provide a 5–10-fold increase in specific power (≥10 W/mm) with efficiency up to 60%, higher operating temperatures, and improved reliability compared to GaAs-based devices.

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