Мощные СВЧ-транзисторы на основе широкозонных полупроводников
A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate influence on device characteristics. It is shown t...
Збережено в:
| Дата: | 2003 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.53 |
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| Назва журналу: | Technology and design in electronic equipment |
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Репозитарії
Technology and design in electronic equipment| Резюме: | A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate influence on device characteristics. It is shown that HEMTs based on AlGaN/GaN heterostructures can provide a 5–10-fold increase in specific power (≥10 W/mm) with efficiency up to 60%, higher operating temperatures, and improved reliability compared to GaAs-based devices. |
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