Новое поколение микроэлектронных кремниевых термодатчиков

• Date: 2003
• Author Affiliations: Yu. M. Shvarts — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; M. M. Shvarts — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; A. N. Ivashchenko — Saturn-Micro Subsidiary, Kyiv, Ukraine; V. I. Bosyi — SPE «Saturn», Kyiv, Ukraine; A. G. Maksimenko — Kvazar-IS Subsidiary, Kyiv, Ukraine; S. V. Sapon — Kvazar-IS Subsidiary, Kyiv, Ukraine
• Keywords: keywords
• Main Authors: Shvarts, Yu. M., Shvarts, M. M., Ivashchenko, A. N., Bosyi, V. I., Maksimenko, A. G., Sapon, S. V.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2003
• Subjects: кремниевые диодные термодатчики; стойкость к механическим ударам и вибрациям; стойкость к климатическим и радиационным воздействиям
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.59
• Journal Title: Technology and design in electronic equipment

Silicon diode temperature sensors of a new generation are presented. The developed sensors are characterized by high measurement accuracy over a wide temperature range, high interchangeability, low power consumption, small mass, and the ability to operate effectively under combined exposure to low a...