Моделирование процессов бесконтактного химикомеханического изготовления подложек полупроводников

• Дата: 2003
• Автори та афіліації: N. N. Grigoriev — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; M. Yu. Kravetsky — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; G. A. Pashchenko — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; S. A. Sypko — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine; A. V. Fomin — V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
• Ключові слова: keywords
• Автори: Grigoriev, N. N., Kravetsky, M. Yu., Pashchenko, G. A., Sypko, S. A., Fomin, A. V.
• Формат: Стаття
• Мова: Українська
• Опубліковано: PE "Politekhperiodika", Book and Journal Publishers 2003
• Теми: бесконтактное хими­ко‑механическое полирование; химическая резка; полупроводниковые подложки; физическая модель; технологические режимы
• Онлайн доступ: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.36
• Назва журналу: Technology and design in electronic equipment

A physical model has been developed for operations of contactless chemical‑mechanical polishing and chemical cutting. Analytical expressions were obtained that relate the geometry of the formed surface and the processing rate to the physical parameters of the ongoing processes. These results can be...