Фотодиоды на основе моноселенидов индия и галлия

• Date: 2003
• Main Authors: Kovaliuk, Z. D., Makhniy, V. P., Yanchuk, A. I.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2003
• Subjects: фотодиоды; моноселенид галлия; моноселенид индия; электрические свойства; фотоэлектрические свойства; p–n‑переход; гетеропереход
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.42
• Journal Title: Technology and design in electronic equipment

The paper analyzes the electrical and photoelectric properties of rectifying structures of various types (surface‑barrier diodes, p–n homojunctions, and heterojunctions) based on gallium and indium monoselenides. The influence of the parameters of the base materials on the main technical characteris...