Структуры на основе гетероперехода "кремний—арсенид галлия" для интегральных оптронов
A comparative analysis of the photoluminescence spectra of heteroepitaxial n‑GaAs layers and the spectral characteristics of p+‑Si—n‑Si—p‑Si—n+‑GaAs structures is presented. The GaAs layers were grown on Si substrates by liquid‑phase epitaxy from a solution‑melt. A complete coincidence of the maxima...
Збережено в:
| Дата: | 2003 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.51 |
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| Назва журналу: | Technology and design in electronic equipment |
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Репозитарії
Technology and design in electronic equipment| Резюме: | A comparative analysis of the photoluminescence spectra of heteroepitaxial n‑GaAs layers and the spectral characteristics of p+‑Si—n‑Si—p‑Si—n+‑GaAs structures is presented. The GaAs layers were grown on Si substrates by liquid‑phase epitaxy from a solution‑melt. A complete coincidence of the maxima of the studied spectra was established, which, combined with the high energy parameters of the emitter and photodetector, confirms the feasibility of creating an integrated optron based on the investigated heterostructures. |
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