Структуры на основе гетероперехода "кремний—арсенид галлия" для интегральных оптронов
A comparative analysis of the photoluminescence spectra of heteroepitaxial n‑GaAs layers and the spectral characteristics of p+‑Si—n‑Si—p‑Si—n+‑GaAs structures is presented. The GaAs layers were grown on Si substrates by liquid‑phase epitaxy from a solution‑melt. A complete coincidence of the maxima...
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| Date: | 2003 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2003
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.2.51 |
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| Journal Title: | Technology and design in electronic equipment |
| Download file: |  |