Поліпшення зворотних характеристик діода Шотткі при використанні гетерування
The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse side of the plate, on the value of the reverse...
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| Datum: | 2019 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2019
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2019.1-2.34 |
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| Назва журналу: | Technology and design in electronic equipment |