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Использование низкоразмерных гетероструктур соединений А3В5 в датчиках давления

The possibility of creating various types of pressure sensors based on low-dimensional structures is demonstrated. Fundamentally new ways to expand the dynamic range and linearity of the load characteristics of highly sensitive sensors, based on creating either a set of quantum dots of various sizes...

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Bibliographic Details
Published in:Технологія та конструювання в електронній апаратурі
Date:2002
Issue:6
Pages:38-43
ISSN:3083-6549
Author Affiliations:
  • I. Ye. Maronchuk — Kherson National Technical University, Ukraine
  • A. D. Kucheruk — Kherson National Technical University, Ukraine
  • S. Yu. Yerokhin — Kherson National Technical University, Ukraine
  • I. V. Chornyi — Kherson National Technical University, Ukraine
Main Authors: Maronchuk, I. Ye., Kucheruk, A. D., Yerokhin, S. Yu., Chornyi, I. V.
Format: Article
Language:wo
Published: PE "Politekhperiodika", Book and Journal Publishers 2002
Subjects:
низкоразмерные гетероструктуры
датчики давления
квантовые точки
квантовые ямы
сверхрешетки
метод импульсного охлаждения
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.38
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Journal Title:Technology and design in electronic equipment
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Technology and design in electronic equipment
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Summary:The possibility of creating various types of pressure sensors based on low-dimensional structures is demonstrated. Fundamentally new ways to expand the dynamic range and linearity of the load characteristics of highly sensitive sensors, based on creating either a set of quantum dots of various sizes or a quantum well width gradient in superlattices, are proposed. Experimental results of the study of epitaxial layers with quantum dots obtained by the pulse cooling method of a saturated melt solution are presented.
ISSN:3083-6549

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