Использование низкоразмерных гетероструктур соединений А3В5 в датчиках давления

• Published in: Технологія та конструювання в електронній апаратурі
• Date: 2002
• Issue: 6
• Pages: 38-43
• ISSN: 3083-6549
• Author Affiliations: I. Ye. Maronchuk — Kherson National Technical University, Ukraine; A. D. Kucheruk — Kherson National Technical University, Ukraine; S. Yu. Yerokhin — Kherson National Technical University, Ukraine; I. V. Chornyi — Kherson National Technical University, Ukraine
• Main Authors: Maronchuk, I. Ye., Kucheruk, A. D., Yerokhin, S. Yu., Chornyi, I. V.
• Format: Article
• Language: wo
• Published: PE "Politekhperiodika", Book and Journal Publishers 2002
• Subjects: низкоразмерные гетероструктуры; датчики давления; квантовые точки; квантовые ямы; сверхрешетки; метод импульсного охлаждения
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.38
• Journal Title: Technology and design in electronic equipment

The possibility of creating various types of pressure sensors based on low-dimensional structures is demonstrated. Fundamentally new ways to expand the dynamic range and linearity of the load characteristics of highly sensitive sensors, based on creating either a set of quantum dots of various sizes...