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Плазменная технология формирования субмикронных структур БИС

High-frequency plasma processes for the deposition and etching of functional layers during the formation of LSI structures with topological dimensions of 0.5–0.8 μm are investigated. The technology ensures minimal induced defect density of functional layers (<0.05 cm⁻²), does not affect t...

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Bibliographic Details
Published in:Технологія та конструювання в електронній апаратурі
Date:2002
Issue:6
Pages:57-63
ISSN:3083-6549
Author Affiliations:
  • S. P. Novosiadlyi — Vasyl Stefanyk Precarpathian National University, Ivano-Frankivsk, Ukraine
Main Author: Novosiadlyi, S. P.
Format: Article
Language:Welsh
Published: PE "Politekhperiodika", Book and Journal Publishers 2002
Subjects:
плазменная технология
субмикронные структуры
БИС
осаждение и травление
гомоэпитаксия
дефектность
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2002.6.57
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Journal Title:Technology and design in electronic equipment
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Technology and design in electronic equipment
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Summary:High-frequency plasma processes for the deposition and etching of functional layers during the formation of LSI structures with topological dimensions of 0.5–0.8 μm are investigated. The technology ensures minimal induced defect density of functional layers (<0.05 cm⁻²), does not affect the charge state of the Si—SiO₂ interface, and creates favorable conditions for low-temperature (<700°C) homoepitaxy of monosilicon and polysilicon on a Si substrate of any orientation type.
ISSN:3083-6549

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