Дослідження електричних та магнітних характеристик високотемпературних датчиків Холла на основі гетероструктури AlGaN/GaN
The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400ºC. The research was performed using device-technological simulation. The active l...
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| Datum: | 2017 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2017
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2017.1-2.28 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400ºC. The research was performed using device-technological simulation. The active layer of the proposed structure is a two-dimensional electron gas region, which is formed between the barrier layer Al0,3Ga0,7N and the undoped GaN channel layer. The results (room temperature current-related magnetic sensitivity 66.4 V/(A·T) and very low temperature cross sensitivity of 0,0273%/ºC) indicate the prospects of the proposed solutions for the practical use. |
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