Влияние самоинтеркаляции меди на термоэлектрические свойства легированных кристаллов Bi2Te3 в процессе их хранения
The authors investigate the change in the thermoelectric properties of Bi2Te3 <Cu> crystals doped by bismuth and indium during their storage. It is shown that such change is caused by the spontaneous overflow of Cu atoms deposited during the initial crystallization period betw...
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| Date: | 2016 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2016
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2016.2-3.49 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The authors investigate the change in the thermoelectric properties of Bi2Te3 <Cu> crystals doped by bismuth and indium during their storage. It is shown that such change is caused by the spontaneous overflow of Cu atoms deposited during the initial crystallization period between Te(2)-Bi and Bi-Te(2) layers, and in defect centres perpendicularly to the surface of the crystal (0001), which culminates in the formation of dissipative nanostructures. It was found that thermoelectric properties of crystals doped with indium undergo the most significant change. |
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