Влияние отжига на ВАХ гетероперехода n-ZnO – p-InSe
The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure.Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered compounds. The basic unit consists of two planes...
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| Datum: | 2015 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2015
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| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.50 |
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| Назва журналу: | Technology and design in electronic equipment |