Влияние отжига на ВАХ гетероперехода n-ZnO – p-InSe

• Datum: 2015
• Hauptverfasser: Kovalyuk, Z. D., Katerynchuk, V. M., Kudrynskyi, Z. R., Kushnir, B. V., Netyaga, V. V., Khomyak, V. V.
• Format: Artikel
• Sprache: Ukrainian
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2015
• Schlagworte: селенид индия; оксид цинка; тонкая пленка; гетеропереход; ВАХ; спектральная фоточувствительность
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.50
• Назва журналу: Technology and design in electronic equipment

The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure.Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered compounds. The basic unit consists of two planes...