Влияние отжига на ВАХ гетероперехода n-ZnO – p-InSe

Влияние отжига на ВАХ гетероперехода n-ZnO – p-InSe

The article is devoted to studying of influence of vacuum low-temperature annealing on the electrical and photoelectric characteristics of n-ZnO-p-InSe heterostructure.Indium monoselenide (InSe) is a semiconductor of the A3B6 group of layered compounds. The basic unit consists of two planes...

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Bibliographic Details
Date:2015
Main Authors: Kovalyuk, Z. D., Katerynchuk, V. M., Kudrynskyi, Z. R., Kushnir, B. V., Netyaga, V. V., Khomyak, V. V.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2015
Subjects:
селенид индия
оксид цинка
тонкая пленка
гетеропереход
ВАХ
спектральная фоточувствительность
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.50
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.5-6.50

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