Исследование удельного сопротивления омических кон­так­тов Au–Ti–Pd–n-Si для лавинно-пролетных диодов

Исследование удельного сопротивления омических кон­так­тов Au–Ti–Pd–n-Si для лавинно-пролетных диодов

Both contact resistivity of Au–Ti–Pd–n-Si ohmic contact and mechanism of current flow are studied in the 100 – 360 K temperature range. A method is proposed for reduction of error in determination of contact resistivity based on analysis of statistical dependences of the measured contact resistivity...

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Bibliographic Details
Date:2015
Main Authors: Basanets, V. V., Slepokurov, V. S., Shinkarenko, V. V., Kudrik, R. Ya., Kudrik, Ya. Ya.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2015
Subjects:
удельное сопротивление
омический контакт
лавинно-пролетный диод
термополевая эмиссия
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.1.33
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:Both contact resistivity of Au–Ti–Pd–n-Si ohmic contact and mechanism of current flow are studied in the 100 – 360 K temperature range. A method is proposed for reduction of error in determination of contact resistivity based on analysis of statistical dependences of the measured contact resistivity values (which are in the range of (0.9 – 2.0).10–5 Ω.cm2). On the basis of the contact resistivity temperature dependence, it is found for an ohmic contact with barrier height of 0.22 eV that the field mechanism of current flow is predominant in the 100 – 200 K temperature range, while thermal-field emission with activation energy of 0.08 eV is predominant in the 200 – 360 K temperature range.

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