Исследование удельного сопротивления омических кон­так­тов Au–Ti–Pd–n-Si для лавинно-пролетных диодов

Both contact resistivity of Au–Ti–Pd–n-Si ohmic contact and mechanism of current flow are studied in the 100 – 360 K temperature range. A method is proposed for reduction of error in determination of contact resistivity based on analysis of statistical dependences of the measured contact resistivity...

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Bibliographische Detailangaben
Datum:2015
Hauptverfasser: Basanets, V. V., Slepokurov, V. S., Shinkarenko, V. V., Kudrik, R. Ya., Kudrik, Ya. Ya.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2015
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Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2015.1.33
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment

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