Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент

There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV) results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Datum:2014
Hauptverfasser: Garkavenko, A. S., Mokritskii, V. A., Banzak, O. V., Zavadskii, V. A.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2014
Schlagworte:
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.5-6.51
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Назва журналу:Technology and design in electronic equipment

Institution

Technology and design in electronic equipment