Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент

Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент

There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV) results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a co...

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Date:2014
Main Authors: Garkavenko, A. S., Mokritskii, V. A., Banzak, O. V., Zavadskii, V. A.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2014
Subjects:
лазер
отжиг
электронный пучок
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.5-6.51
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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spelling oai:tkea.com.ua:article-3032025-05-30T19:33:29Z Ionization annealing of semiconductor crystals. Part two: the experiment Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент Garkavenko, A. S. Mokritskii, V. A. Banzak, O. V. Zavadskii, V. A. laser annealing electron beam лазер отжиг электронный пучок There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV) results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a continuous flow, the current density in such accelerators is 10–5–10–6 A/cm2, the energy — 0,3–1 MeV. All changes in the properties after such irradiation are resistant at room temperature, and marked properties' recovery to baseline values is observed only after prolonged heating of the crystals to a high temperature. In contrast, the authors in their studies observe an improvement of the structural properties of semiconductor crystals (annealing of defects) under irradiation with powerful (high current) pulsed electron beams of high energy (E0 = 0,3–1 MeV, t = 0,1–10 ns, Ω = 1–10 Hz, j = 20–300 A/cm2). In their previous paper, the authors presented the theoretical basis of this effect. This article describes an experimental study on the influence of high-current pulsed electron beams on the optical homogeneity of semiconductor GaAs and CdS crystals, confirming the theory put forward earlier. При облучении полупроводниковых кристаллов мощными (сильноточными) импульсными электронными пучками высоких энергий обнаружен новый вид отжига, названный авторами ионизационным. В данной статье описаны экспериментальные исследования, подтверждающие сделанное ранее теоретическое обоснование. PE "Politekhperiodika", Book and Journal Publishers 2014-12-24 Article Article Peer-reviewed Article application/pdf https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.5-6.51 10.15222/TKEA2014.2.51 Technology and design in electronic equipment; No. 5–6 (2014): Tekhnologiya i konstruirovanie v elektronnoi apparature; 51-56 Технологія та конструювання в електронній апаратурі; № 5–6 (2014): Технология и конструирование в электронной аппаратуре; 51-56 3083-6549 3083-6530 uk https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.5-6.51/268 Copyright (c) 2014 Garkavenko A. S., Mokritskii V. A., Banzak O. V., Zavadskii V. A. http://creativecommons.org/licenses/by/4.0/
institution Technology and design in electronic equipment
baseUrl_str
datestamp_date 2025-05-30T19:33:29Z
collection OJS
language Ukrainian
topic лазер
отжиг
электронный пучок
spellingShingle лазер
отжиг
электронный пучок
Garkavenko, A. S.
Mokritskii, V. A.
Banzak, O. V.
Zavadskii, V. A.
Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент
topic_facet laser
annealing
electron beam
лазер
отжиг
электронный пучок
format Article
author Garkavenko, A. S.
Mokritskii, V. A.
Banzak, O. V.
Zavadskii, V. A.
author_facet Garkavenko, A. S.
Mokritskii, V. A.
Banzak, O. V.
Zavadskii, V. A.
author_sort Garkavenko, A. S.
title Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент
title_short Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент
title_full Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент
title_fullStr Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент
title_full_unstemmed Ионизационный отжиг полупроводниковых кристаллов. Часть вторая: эксперимент
title_sort ионизационный отжиг полупроводниковых кристаллов. часть вторая: эксперимент
title_alt Ionization annealing of semiconductor crystals. Part two: the experiment
description There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV) results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a continuous flow, the current density in such accelerators is 10–5–10–6 A/cm2, the energy — 0,3–1 MeV. All changes in the properties after such irradiation are resistant at room temperature, and marked properties' recovery to baseline values is observed only after prolonged heating of the crystals to a high temperature. In contrast, the authors in their studies observe an improvement of the structural properties of semiconductor crystals (annealing of defects) under irradiation with powerful (high current) pulsed electron beams of high energy (E0 = 0,3–1 MeV, t = 0,1–10 ns, Ω = 1–10 Hz, j = 20–300 A/cm2). In their previous paper, the authors presented the theoretical basis of this effect. This article describes an experimental study on the influence of high-current pulsed electron beams on the optical homogeneity of semiconductor GaAs and CdS crystals, confirming the theory put forward earlier.
publisher PE "Politekhperiodika", Book and Journal Publishers
publishDate 2014
url https://www.tkea.com.ua/index.php/journal/article/view/TKEA2014.5-6.51
work_keys_str_mv AT garkavenkoas ionizationannealingofsemiconductorcrystalsparttwotheexperiment
AT mokritskiiva ionizationannealingofsemiconductorcrystalsparttwotheexperiment
AT banzakov ionizationannealingofsemiconductorcrystalsparttwotheexperiment
AT zavadskiiva ionizationannealingofsemiconductorcrystalsparttwotheexperiment
AT garkavenkoas ionizacionnyjotžigpoluprovodnikovyhkristallovčastʹvtoraâéksperiment
AT mokritskiiva ionizacionnyjotžigpoluprovodnikovyhkristallovčastʹvtoraâéksperiment
AT banzakov ionizacionnyjotžigpoluprovodnikovyhkristallovčastʹvtoraâéksperiment
AT zavadskiiva ionizacionnyjotžigpoluprovodnikovyhkristallovčastʹvtoraâéksperiment
first_indexed 2025-09-24T17:30:42Z
last_indexed 2025-09-24T17:30:42Z
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