Получение двухсторонних высоковольтных эпитак­сиальных кремниевых p–i–n-структур методом ЖФЭ

Получение двухсторонних высоковольтных эпитак­сиальных кремниевых p–i–n-структур методом ЖФЭ

Silicon p–i–n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their p...

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Bibliographic Details
Date:2013
Main Authors: Vakiv, N. M., Krukovsky, S. I., Tymchyshyn, V. R., Vas'kiv, A. P.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2013
Subjects:
эпитаксиальный слой
жидкофазная эпитаксия
редкоземельный элемент
легирование
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.41
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.41

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