Получение двухсторонних высоковольтных эпитак­сиальных кремниевых p–i–n-структур методом ЖФЭ

• Date: 2013
• Main Authors: Vakiv, N. M., Krukovsky, S. I., Tymchyshyn, V. R., Vas'kiv, A. P.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2013
• Subjects: эпитаксиальный слой; жидкофазная эпитаксия; редкоземельный элемент; легирование
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.6.41
• Journal Title: Technology and design in electronic equipment

Silicon p–i–n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE). In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their p...