Исследование процесса формирования токовых характеристик кремниевого фотодиода с выпрямляющими барьерами
The article presents the results of studies on silicon photodiode double-barrier structure with back-to-back rectifying junctions «metal — semiconductor» in the photodiode and photovoltaic modes. Such structures are of interest for the development of input devices for weak optical signals.
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| Date: | 2013 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2013
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2013.1.09 |
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| Journal Title: | Technology and design in electronic equipment |