Получение тонких пленок Si3N4 при пониженном давлении на пластинах диаметром до 200 мм

• Date: 2012
• Main Authors: Nalivaiko, O. Yu., Turtsevich, A. S.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2012
• Subjects: нитрид кремния; конденсаторный диэлектрик; осаждение тонких пленок
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.6.34
• Journal Title: Technology and design in electronic equipment

The influence of silicon nitride deposition condition on parameters of the obtained films has been investigated. It has been found that the deposition rate of silicon nitride films decreases with deposition temperature decreasing, and at the same time the within wafer thickness uniformity improves....