Гетеропереходы, сформированные отжигом слоистых кристаллов GaSe и InSe в парах цинка
The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunction...
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| Datum: | 2012 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA.2012.6.40 |
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| Назва журналу: | Technology and design in electronic equipment |