Стимулируемая водородом миграция атомов металлов в структурах «металл — полупроводник»
The article presents experimental results of the effect atomic hydrogen has on the Cu—Ge and Ni—Ge structures. It has been shown experimentally that the treatment of structures at room temperature is accompanied by the introduction of metal atoms with an abnormally high concentration in the surface...
Gespeichert in:
| Datum: | 2012 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2012
|
| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.6.44 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Technology and design in electronic equipment |
Institution
Technology and design in electronic equipmentSchreiben Sie den ersten Kommentar!