Фотодиод на основе GaP с повышенной чувствительностью в коротковолновой области УФ-спектра
An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+–n-GaP–SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structu...
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| Datum: | 2012 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.5.31 |
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| Назва журналу: | Technology and design in electronic equipment |