Фотодиод на основе GaP с повышенной чувствительностью в коротковолновой области УФ-спектра

• Date: 2012
• Main Author: Dobrovol’skii, Yu. G.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2012
• Subjects: фотодиод; фосфид галлия; компьютерное моделирование; чувствительность
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.5.31
• Journal Title: Technology and design in electronic equipment

An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+–n-GaP–SnO2(F) has been developed. It has been shown that the monochromatic current sensitivity to radiation at wavelength of 250 nm in such a structu...