Широкозонные халькогенидные сцинтилляторы на основе соединений AIIBVI
The formation characteristics of chalcogenide scintillators (CS) based on zinc sulfide and selenide are considered. The research has shown that such scintillators have high specific light yield, low afterglow level, short luminescence time, low value of the effective atomic number (Zeff=26–33), larg...
Збережено в:
| Дата: | 2012 |
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| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | Ukrainian |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.4.25 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | The formation characteristics of chalcogenide scintillators (CS) based on zinc sulfide and selenide are considered. The research has shown that such scintillators have high specific light yield, low afterglow level, short luminescence time, low value of the effective atomic number (Zeff=26–33), large band gap (Eg=2,8–3,6 eV), high thermal stability of output parameters. The prospects of use of such scintillators in various devices of modern radiation instrumentation has been shown. |
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