Широкозонные халькогенидные сцинтилляторы на основе соединений AIIBVI

Широкозонные халькогенидные сцинтилляторы на основе соединений AIIBVI

The formation characteristics of chalcogenide scintillators (CS) based on zinc sulfide and selenide are considered. The research has shown that such scintillators have high specific light yield, low afterglow level, short luminescence time, low value of the effective atomic number (Zeff=26–33), larg...

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Datum:2012
Hauptverfasser: Starzhinskiy, N. G., Grinyov, B. V., Ryzhikov, V. D., Maliykin, Yu. V., Zhukov, A. V., Sidletskiy, О. Ts., Zenya, I. M., Lalayants, A. I.
Format: Artikel
Sprache:Ukrainian
Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2012
Schlagworte:
кристаллы AIIBVI-соединений
сульфид цинка
сцинтилляционные характеристики
центры люминесценции
халькогенидные сцинтилляторы
Online Zugang:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.4.25
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Назва журналу:Technology and design in electronic equipment

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Technology and design in electronic equipment
Beschreibung
Zusammenfassung:The formation characteristics of chalcogenide scintillators (CS) based on zinc sulfide and selenide are considered. The research has shown that such scintillators have high specific light yield, low afterglow level, short luminescence time, low value of the effective atomic number (Zeff=26–33), large band gap (Eg=2,8–3,6 eV), high thermal stability of output parameters. The prospects of use of such scintillators in various devices of modern radiation instrumentation has been shown.

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