Свойства двойных гетеропереходов p+-InP/n-InGaAsP/n-InP, изготовленных методом жидкофазной эпитаксии
The double epitaxial p+-InP/n-InGaAsP/n-InP heterostructures with coinciding electrical and metallurgical boundaries has been obtained. Such coincidence is achieved due to growing an additional buffer n-InP layer and de...
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| Date: | 2012 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.2.27 |
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| Journal Title: | Technology and design in electronic equipment |