Фотолюминесцентный метод исследования пластической деформации на границе раздела «SiO2–Si»
The possibility of using the photoluminescence method for studying the mechanisms of plastic deformation at the boundary of "SiO2 — Si" in the process of obtaining nanostructured silicon layers by deformation.
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| Date: | 2012 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.2.47 |
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| Journal Title: | Technology and design in electronic equipment |