Определение радиационной стойкости ИС с помощью низкоэнергетического излучения
A method is proposed for determination of radiation dose via the ionization current in the p–n-junction and of radiation resistance of MIS integrated circuits with the use of low-energy (10–40 keV) X-rays.
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| Datum: | 2012 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainian |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2012
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.1.30 |
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| Назва журналу: | Technology and design in electronic equipment |